ON Semiconductor NTE4151PT1G
MOSFET, P-Ch, VDSS -20V, RDS(ON) 0.26Ohm, ID -760mA, SC-89, PD 313mW, VGS +/-6VWe are pleased to offer our customers ON Semiconductor products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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ON Semiconductor NTE4151PT1G Specifications
| Property | Value |
|---|---|
| Channel Type | P |
| Configuration | Single |
| Drain Current | -760 mA |
| Drain to Source On Resistance | 0.26 Ohms |
| Drain to Source Voltage | -20 V |
| Forward Transconductance | 0.4 |
| Forward Voltage, Diode | -0.72 V |
| Gate to Source Voltage | ±6 V |
| Length | 0.066 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Package Type | SC-89 |
| Polarization | P-Channel |
| Power Dissipation | 313 mW |
| Product Header | P-Channel Small Signal MOSFET |
| Series | NT MOSFET Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 2.1 nC |
| Turn Off Delay Time | 29 ns |
| Turn On Delay Time | 8 ns |
| Voltage, Breakdown, Drain to Source | -20 V |