Siliconix / Vishay SUD50N03-06P-E3
N-Channel 30-V (D-S) 175 DEG.C MOSFETWe are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SUD50N03-06P-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | N |
| Configuration | Single |
| Dimensions | 6.73 x 6.22 x 2.38 mm |
| Drain Current | 84 A |
| Drain to Source On Resistance | 0.0105 Ohms |
| Drain to Source Voltage | 30 V |
| Fall Time | 15 ns |
| Forward Transconductance | 20 S |
| Forward Voltage, Diode | 1.5 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.094" (2.38mm) |
| Input Capacitance | 3100 pF @ 25 V |
| Junction to Ambient Thermal Resistance | 18 °C/W |
| Length | 0.264 in |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Operating and Storage Temperature | -55 to +175 C |
| Package Type | TO-252 |
| Polarization | N-Channel |
| Power Dissipation | 88 W |
| Resistance, Thermal, Junction to Case | 1.7 °C/W |
| Series | SUD Series |
| Temperature Operating Range | -55 to +175 °C |
| Total Gate Charge | 30 nC |
| Turn Off Delay Time | 30 ns |
| Turn On Delay Time | 12 ns |
| Typical Gate Charge @ Vgs | 21 nC @ 4.5 V |
| Voltage, Breakdown, Drain to Source | 30 V |
| Width | 0 in |