ON Semiconductor MCR08BT1G
Diode,SCR,Vr 200V,If 0.8A,Pkg SOT-223 (TO-261),Vf 1.7V,I�T 0.4A�s,Tj +110degcWe are pleased to offer our customers ON Semiconductor products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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ON Semiconductor MCR08BT1G Specifications
| Property | Value |
|---|---|
| Blocking Voltage | 600 V |
| Current Squared Time Rating | 0.4 A sq. s |
| Dimensions | 6.70 x 3.70 x 1.65 mm |
| Forward Current | 0.8 A |
| Forward Voltage | 1.7 V |
| Gate Trigger Current | 200 μA |
| Gate Trigger Voltage | 0.8 V |
| Height | 0.065" (1.65mm) |
| Holding Current | 5 mA |
| Length | 0.263 in |
| Maximum Junction Temperature | +110 °C |
| Maximum On State Current | 0.8 A |
| Maximum On State Voltage | 1.7 V |
| Maximum Operating Temperature | +110 °C |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Surface Mount |
| Number of Pins | 4 |
| Off State Voltage | 600 V |
| Operating Temperature | -40 to +110 °C |
| Package Type | SOT-223 |
| Primary Type | Sensitive |
| Product Header | Sensitive Gate Silicon Controlled Rectifier |
| Repetitive Off State Peak Current | 200 μA |
| Repetitive Peak Voltage | 600 V |
| Surge Current | 8 A |
| Temperature Operating Range | -40 to +110 °C |
| Thyristor Type | SCR |
| Width | 0 in |