Siliconix / Vishay SI2309DS-T1-E3

MOSFET, Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W

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Siliconix / Vishay SI2309DS-T1-E3 Specifications

Property	Value
Drain Current	-1.25 A
Drain to Source On Resistance	0.275 Ohm
Forward Transconductance	1.9 S
Forward Voltage, Diode	-0.82 V
Gate to Source Voltage	±20 V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Package Type	TO-236 (SOT-23)
Polarization	P-Channel
Power Dissipation	1.25 W
Product Header	P-Channel MOSFET
Series	SI23 Series
Total Gate Charge	5.4 nC
Turn Off Delay Time	15.5 ns
Turn On Delay Time	10.5 ns
Voltage, Breakdown, Drain to Source	-60 V