Siliconix / Vishay SI5504BDC-T1-E3
SI5504BDC-T1-E3 N/P-channel MOSFET Transistor, 3.7 A, 4 A, 30 V, 8-Pin 1206We are pleased to offer our customers Siliconix / Vishay products with delivery to their respective countries. Please contact us for detailed information about pricing and delivery times. In your request, kindly send information containing product codes and specific details to our [email protected] address.
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Siliconix / Vishay SI5504BDC-T1-E3 Specifications
| Property | Value |
|---|---|
| Channel Type | N ; P |
| Configuration | Dual Gate ; Dual Source ; Quad Drain |
| Dimensions | 3.1 x 1.7 x 1.1 mm |
| Drain Current | -3.7 to 4 A |
| Drain to Source On Resistance | 0.065 to 0.14 Ohms |
| Drain to Source Voltage | -30 to 30 V |
| Forward Transconductance | 3.5, 5 S |
| Forward Voltage, Diode | 0.8/-0.8 V |
| Gate to Source Voltage | ±20 V |
| Height | 0.043" (1.1mm) |
| Input Capacitance | 170 pF@ -15 V, 220 pF @ 15 V |
| Junction to Ambient Thermal Resistance | 70 °C/W |
| Length | 0.12 in |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 8 |
| Operating Temperature | -55 to 150 °C |
| Package Type | 1206-8 ChipFET |
| Polarization | N-Channel and P-Channel |
| Power Dissipation | 3.1 ; 3.12 W |
| Series | SI55 Series |
| Temperature Operating Range | -55 to +150 °C |
| Total Gate Charge | 4.5/4.5 nC |
| Turn Off Delay Time | 10 ns |
| Turn On Delay Time | 4 ns |
| Typical Gate Charge @ Vgs | 4.5 nC @ 15 V |
| Voltage, Breakdown, Drain to Source | 30/-30 V |
| Width | 0 in |